According to the Patently apple report, Samsung…

With the slowdown of Moore's law, the DRAM process has also entered the technical bottleneck period, and the expansion speed of DRAM has slowed significantly. Therefore, 3D DRAM has become a new path for storage manufacturers to break through the higher limit of DRAM technology. Recently, according to Korean media The ELEC, Samsung Electronics has formed a development team in its semiconductor research center to mass produce 4F2 DRAM. The goal of the development team is to apply the 4F2 DRAM…

First, let's take a look at MRAM (Magnetic Random Access Memory), which is a non-volatile magnetic random access memory. It has high-speed read and write capability of static random access memory (SRAM), as well as high integration of dynamic random access memory (DRAM), and can…

These compact, high-performance wire-to-board connectors feature a fiberglass reinforced polyphenylene sulfide (PPS) housing that provides a rugged construction and long life with a minimum insulation resistance of 100 MΩ for permanent signal integrity. The new product features a 2mm pitch dual row contact set that allows the through-board PCB male connector to be…