3D NAND Memory Market Global Market - Overview
The 3D NAND memory widely used in the consumer electronics such as smartphone, laptop and mobile and many among them. This 3D NAND memory is arranged vertical form in multi –level layers which offers to improve the performance of the devices with low latency time compared to the conventional storage devices such as tape and hard disk drives. On the flip side, 2D (planar) NAND memory had limited storage capacity which eventually decreases the dependency on the planar memory cells. Thus, in order to increase the storage capacity at lower cost, the 3D NAND has been developed to counter the difficulties faced by planar NAND memory. On the basis of storing capacity, the 3D NAND are of three types, single-level cell, multiple level cell and triple-level cell. Mostly multiple-level and triple-level cell are widely used due to advanced reliability and high endurance quality of the NAND memory. However, the increase in demand for improved data storage devices and cost –efficient solution are anticipated to drive the market over the forecast period. On the flip side, the high cost for the manufacturing of 3D NAND memory is expected to hinder growth of the market over the review period.
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The key players in the market of 3D NAND memory market research are- Samsung (South Korea), Toshiba (Japan), SanDisk (U.S.), Micron (U.S.), Intel (U.S.), SK Hynix (South Korea), Apple Inc. (U.S.), Intel Corp. (U.S.) among others.
3D NAND Memory Market Global Market - Segmentation
Segmentation by Type: Single-level cell (SLC), Multi-level cell (MLC) and Triple-level cell (TLC).
Segmentation by Product Type: Camera, Laptops and PCs, Smartphones & Tablets, and Others.
Segmentation by Application: Consumer Electronics, Mass Storage, Industrial, Aerospace & Defence, Telecommunication among others
Segmentation by Region: North America, Europe, Asia Pacific, Rest of the World.
3D NAND Memory Market Global Market-Regional Analysis
Asia Pacific is expected to dominate the global 3D NAND memory market research with the largest market share in the region. China, India, and Japan are the prominent countries leading in the region attributed to increase in disposable income which eventually surge the demand for the purchasing the electronic devices such as smartphone, laptops and many more. Additionally, the presence of large number of electronic and semiconductor manufacturer which increases the exports of the electronic component globally are expected to drive the 3D NAND memory market over the forecast period. North America is expected to have a steady growth rate of the 3D NAND Memory market. The U.S and Canada are the leading countries in the region. This is due to increased investment in research and development to evolve new techniques to increase the memory space in 3D NAND memory which is expected to drive the memory market over the review period.
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April 2017, SK Hynix Incorporation unveiled the first 72-layer 256 bit 3D NAND flash memory. In the process of achieving high productivity and boost the efficiency and dependability SK Hynix launched 72-Layer 256Gb(Gigabit) 3D (Three-Dimensional) NAND Flash memory. Through this newly develop memory increases the operational speed faster by two times and also enhance the read/write data operation by 20% percent as compared to 48 –layer memory.
June 2017, Toshiba Corporation introduce the 96-layer 3D flash memory. Toshiba Corporation had designed a prototype sample of 96-layer BiCS FLASH™ triple level cell stacked structure to fulfil the demand for the consumer applications such as electronic gadgets and memory card. The advanced flash memory will minimise the cost per bit and improve the production of memory capacity per silicon wafer.
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