Samsung's fifth-generation V-NAND memory chip is the industry's first to use the Toggle DDR 4.0 interface. This interface is called a highway for data transmission and can transfer speeds up to 1.4 Gbps between storage. The latter increases the transfer speed of storage by 40% compared to the previous generation. In addition, the new V-NAND data write speed is only delayed by 500 microseconds, an improvement of 30% compared to the previous generation, and the read signal time has been reduced to 50 microseconds. It is worth mentioning that the new 96-layer V-NAND flash memory chip is also more energy efficient, and the voltage is reduced from 1.8V to 1.2V.

To achieve all of the above improvements, the next-generation V-NAND is equipped with a 90-layer 3D TLC flash memory unit. They are stacked in a pyramidal structure with tiny holes in the middle. These apertures are used as channels, measuring only a few hundred microns wide, containing more than 85 billion flash cells, each cell storing up to 3 bits of data, and a single Die capacity of 256Gb (32GB). This manufacturing method includes many advanced technologies, such as circuit design, new process technology and so on. The details are not detailed in Samsung, but the company said that the improvement of V-NAND has increased its production efficiency by more than 30%.