With the slowdown of Moore's law, the DRAM process has also entered the technical bottleneck period, and the expansion speed of DRAM has slowed significantly. Therefore, 3D DRAM has become a new path for storage manufacturers to break through the higher limit of DRAM technology. Recently, according to Korean media The ELEC, Samsung Electronics has formed a development team in its semiconductor research center to mass produce 4F2 DRAM. The goal of the development team is to apply the 4F2 DRAM…